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Dec 07, 2020 · Manufacturer & distributor of standard & custom aluminum nitride ceramic products including aluminum nitride substrates. Features include hexagonal crystal structure with covalent bonding, dielectric properties, high thermal conductivity, low thermal expansion coefficient, stable to high temperatures in inert atmospheres & non-reactive with normal semiconductor process chemicals & …

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Description: exhibited by aluminum oxide or aluminum nitride and, in addition, offers thermal conductivity ten times higher than alumina, and fifty percent higher than aluminum nitride, a dielectric constant that is lower than both alumina and aluminum nitride, and weight per . Applications: Electronics / RF-Microwave, Other, Optics / Optical Grade, Refractory / High Temperature Materials

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The aluminum nitride film 53 (N/Al=1/1) of 2 μm thick was formed thereon using an aluminum nitride (Al/N) target under conditions of Ar:N 2 =5:1, a gas pressure of 0.01 Torr and a discharge electric power of 200 W. (FIG. 5B). Next, the processed wafer with the aluminum nitride film 53 on the surface was set in a sputtering apparatus.

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Feb 01, 2020 · Aluminum nitride thin films deposited on vertical Si(1 1 1) surfaces using MOCVD. • The films have high quality wurtzite structure and c-axis orientation. • Full width at half maximum of the 0002 in-plane X-ray rocking curve is 1.70°–3.44°. • The film thickness reduces at a rate of 0.8–1.2 nm/μm down the vertical surfaces. •

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Dec 10, 2015 · Thereafter, the piezoelectric layer stacking (e.g., aluminum nitride seed layers 910, molybdenum layer 912, and aluminum nitride stacking layer 914) described earlier with respect to FIG. 9B can be reduced to only an aluminum nitride layer 1302, wherein an aluminum nitride layer 1302 is overlaid and patterned 1304 on top of the structural ...

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Application of chemical transformation induced fracture ...

Aug 01, 2012 · Cutting experiments were performed using a hybrid CO 2-LWJ machining process as shown in Fig. 1.We have previously applied this process in the machining of ceramics such as aluminum oxide , zirconia , polycrystalline cubic boron nitride (pCBN) , and aluminum nitride .In this hybrid process, a laser beam is used for localized heating of the sample surface and an abrasive-free …

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Oct 26, 2008 · For some time, then, the compound-semiconductor and manufacturing industry has acknowledged the possible environmental, health and safety hazards associated with producing GaAs- and indium phosphide- (InP) base wafers and epitaxial layers. (Epitaxy is a method of depositing film on a monocrystalline substrate.)

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Stability experiments on MEMS aluminum nitride RF ...

Feb 04, 2010 · There were no detectable differences between the vacuum or air samples or controls. As a test for surface contamination, three wafers were prepared; 1) bare Si wafer, 2) Si wafer plus 750 nm of Aluminum Nitride, and 3) Si wafer plus 750 nm of Aluminum Nitride plus 100 nm of Al. These wafers replicate the exposed surfaces of the resonators.

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Apr 03, 2017 · Wafer carrier and method Apr 3, 2017 - Infineon Technologies Americas Corp. In an embodiment, a wafer carrier includes a pocket sized and shaped to accommodate a wafer, the pocket being defined by a base and a substantially circular perimeter including an inner face and an outer face.

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Showerhead With Inlet Mixer Granted: November 26, 2020 Application Number: 20200370180 Provided are gas distribution apparatus with a showerhead having a front plate and a back plate spaced to form a gas volume, the front plate having an inner surface adjacent the gas volume and an outer surface with a plurality of apertures extending therethrough, the gas volume having a center region and an ...

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The closest technical solution to the claimed invention is a metallization paste (3)designed for plating aluminium nitride ceramic comprising (parts by weight of 100 parts by weight) molybdenum 90, manganese 5 and SiO 2 5. The paste should be applied on aluminium nitride ceramics and fired at 1200-1400°C in non-oxidizing environment.

Thermal stress fracture mode of CO2 laser cutting of ...

A thermal stress fracture mode of material removal by laser cutting was conducted in 1-mm thick wafers of aluminum nitride (AlN) using a continuous wave CO2 laser with a defocused beam.

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Specializes in the design and manufacture of unique ceramic components. Provides these components and associated services in a manner that ensures consistent and reliable performance. Quality is a commitment to customers. This process yields components of the highest precision, accuracy, repeatability and quality.

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Planar metal-insulator-semiconductor capacitors are fabricated on native gallium nitride substrates with different gate dielectrics, namely, silicon dioxide, silicon nitride, and aluminum oxide. Th...

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Thermal stress fracture mode of CO2 laser cutting of ...

A thermal stress fracture mode of material removal by laser cutting was conducted in 1-mm thick wafers of aluminum nitride (AlN) using a continuous wave CO2 laser with a defocused beam.

Metallising paste and method of aluminium nitride ceramics ...

The closest technical solution to the claimed invention is a metallization paste (3)designed for plating aluminium nitride ceramic comprising (parts by weight of 100 parts by weight) molybdenum 90, manganese 5 and SiO 2 5. The paste should be applied on aluminium nitride ceramics and fired at 1200-1400°C in non-oxidizing environment.

Stability experiments on MEMS aluminum nitride RF …

We report on long-term stability experiments on a novel MEMS radio frequency (RF) resonator fabricated in Aluminum Nitride technology. The AlN fabrication process allows for the realization of resonators, filters, and resonant sensors operating over the frequency range from 500 kHz to in excess of 10 GHz using CMOS compatible materials.

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Study of Properties of AlN Thin Films Deposited by ...

Nanostructured thin (100–200 nm) films of cubic aluminum nitride with optical bandgaps of ~5 eV and refractive indices varying from 1.6 to 4.0 in the wavelength range of ~250 nm are fabricated.

US20060272572A1 - Nitride semiconductor substrate and ...

A nitride semiconductor crystal substrate is produced by forming a network mask repeating a closed loop unit shape upon an undersubstrate, growing a nitride semiconductor crystal in vapor phase, producing convex facet hills covered with facets on exposed parts Π, forming outlining concavities on mask-covered parts γ, not burying the facets, maintaining the convex facet hills on Π and the ...

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US7859008B2 US11/621,556 US62155607A US7859008B2 US 7859008 B2 US7859008 B2 US 7859008B2 US 62155607 A US62155607 A US 62155607A US 7859008 B2 US7859008 B2 US 7859008B2 Authority US United States Prior art keywords crystalline composition capsule wafer gallium nitride less Prior art date 2002-12-27 Legal status (The legal status is an assumption and is not a …

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Dec 22, 2017 · Thereafter, the piezoelectric layer stacking (e.g., aluminum nitride seed layers 910, molybdenum layer 912, and aluminum nitride stacking layer 914) described earlier with respect to FIG. 9B can be reduced to only an aluminum nitride layer 1302, wherein an aluminum nitride layer 1302 is overlaid and patterned 1304 on top of the structural ...

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The blank wafer also serves as a mechanical support once the device wafer is thinned down to the epitaxial silicon layer thickness, i.e., a few micrometers to tens of micrometers thick. The oxide-oxide bond must be devoid of any epoxy or organics, in order for the bond to survive subsequent high temperature processing steps, including MBE and ALD.

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